wuxi nce power semiconductor co., ltd page v1.0 1 nce20n65t pb-free product nce n-channel enhancement mode power mosfet v ds 650 v r ds(on) 190 m ? i d 20 a general description the series of devices use advanced super junction technology and design to provide excellent r ds(on) with low gate charge. this super junction mosfet fits the industry?s ac-dc smps requirements for pfc, ac/dc power conversion, and industrial power applications. features new technology for high voltage device low on-resistance and low conduction losses small package ultra low gate charge cause lower driving requirements 100% avalanche tested application power factor correction pfc switched mode power supplies(smps) uninterruptible power supply ups package marking and ordering information device device package marking nce20n65t to-247 20N65C3 table 1. absolute maximum ratings (t c =25 ) parameter symbol nce20n65t unit drain-source voltage ( v gs= 0v v ds 650 v gate-source voltage ( v ds= 0v) v gs 30 v continuous drain current at tc=25c i d (dc) 20 a continuous drain current at tc=100c i d (dc) 12.5 a pulsed drain current (note 1) i dm (pluse) 60 a drain source voltage slope, vds = 480 v, id = 20 a, tj = 125 c dv/dt 50 v/ns maximum power dissipation(tc=25 ) derate above 25 c p d 208 1.67 w w/ c single pulse avalanche energy (note 2) e as 690 mj avalanche current (note 1) i ar 20 a schematic dia g ram to-247
wuxi nce power semiconductor co., ltd page v1.0 2 nce20n65t pb-free product repetitive avalanche energy t ar limited by t jmax (note 1) e ar 1 mj operating junction and st orage temperature range t j ,t stg -55...+150 c * limited by maximum junction temperature table 2. thermal characteristic parameter symbol nce20n65t unit thermal resistance junction-to-case maximum r thjc 0.6 c /w thermal resistance junction-to-ambient maximum r thja 62 c /w table 3. electrical characteristics (ta=25 unless otherwise noted) parameter symbol condition min typ max unit on/off states drain-source breakdown voltage bv dss v gs =0v i d =250 a 650 v zero gate voltage drain current(tc=25 ) i dss v ds =650v,v gs =0v 1 a zero gate voltage drain current(tc=125 ) i dss v ds =650v,v gs =0v 100 a gate-body leakage current i gss v gs =30v,v ds =0v 100 na gate threshold voltage v gs(th) v ds =v gs ,i d =250 a 2.5 3 3.5 v drain-source on-state resistance r ds(on) v gs =10v, i d =10a 190 m ? dynamic characteristics forward transconductance g fs v ds = 20v, i d = 10a 17.5 s input capacitance c lss 2300 pf output capacitance c oss 95 pf reverse transfer capacitance c rss v ds =100v,v gs =0v, f=1.0mhz 7 pf total gate charge q g 85 114 nc gate-source charge q gs 11 nc gate-drain charge q gd v ds =480v,i d =20a, v gs =10v 33 nc switching times turn-on delay time t d(on) 10 ns turn-on rise time t r 5 ns turn-off delay time t d(off) 67 100 ns turn-off fall time t f v dd =380v,i d =20a, r g =3.6 ? ,v gs =10v 4 12 ns source- drain diode characteristics source-drain current(body diode) i sd 20 a pulsed source-drain current(body diode) i sdm t c =25c 60 a forward on voltage v sd tj=25c,i sd =20a,v gs =0v 0.9 1.3 v reverse recovery time t rr 500 ns reverse recovery charge q rr tj=25c,i f =20a,di/dt=100a/ s 11 nc notes 1. repetitive rating: pulse width limited by maximum junction temperature 2. tj=25 ,vdd=50v,vg=10v, r g =25 ?
wuxi nce power semiconductor co., ltd page v1.0 3 nce20n65t pb-free product typical electrical and therma l characteristics (curves) figure1. safe operating area for nce20n65t figure3. source-drain diode forward voltage figure4. output characteristics figure5. transfer characteristics figure6. static drain-source on resistance figure7. r ds(on) vs junction temperature
wuxi nce power semiconductor co., ltd page v1.0 4 nce20n65t pb-free product figure8. bv dss vs junction temperature figure9. maximum i d vs junction temperature figure10. gate charge waveforms figure10. capacitance figure11. transient thermal impedance for nce20n65t
wuxi nce power semiconductor co., ltd page v1.0 5 nce20n65t pb-free product test ? circuit ? 1 gate charge test circuit & waveform 2 switch time test circuit 3 unclamped inductive switchin g test circuit & waveforms
wuxi nce power semiconductor co., ltd page v1.0 6 nce20n65t pb-free product to-247 package information dimensions in millimeters dimensions in inches symbol min. max. min. max. a 4.850 5.150 0.191 0.200 a1 2.200 2.600 0.087 0.102 b 1.000 1.400 0.039 0.055 b1 2.800 3.200 0.110 0.126 b2 1.800 2.200 0.071 0.087 c 0.500 0.700 0.020 0.028 c1 1.900 2.100 0.075 0.083 d 15.450 15.750 0.608 0.620 e1 3.500 ref 0.138 ref e2 3.600 ref 0.142 ref l 40.900 41.300 1.610 1.626 l1 24.800 25.100 0.976 0.988 l2 20.300 20.600 0.799 0.811 7.100 7.300 0.280 0.287 e 5.450 typ 0.215 typ h 5.980 ref 0.235 ref
wuxi nce power semiconductor co., ltd page v1.0 7 nce20n65t pb-free product attention: any and all nce products described or contained herein do not ha ve specifications that can h andle applications that require extremely high levels of reliability, such as life-support syst ems, aircraft's control systems, or other applications whose fai lure can be reasonably expected to result in serious ph ysical and/or material damage. consult with your nce representative nearest you before us ing any nce products described or c ontained herein in such applications. nce assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum rati ngs, operating condition ranges, or other parameters) listed in products specifications of any and all nce products described or contained herein. specifications of any and all nce pro ducts described or contained herein stipulat e the performance, characteristics, and functions of the described products in t he independent state, and are not guarantees of the perform ance, characteristics, and functions of the described products as mount ed in the customer?s products or equipmen t. to verify symptoms and states that cannot be evaluated in an indepe ndent device, the customer s hould always evaluate and test devices mounted in the customer?s products or equipment. nce power semiconductor co.,ltd. st rives to supply high-quality high-reli ability products. ho wever, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger hum an lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures includ e but are not limited to protective circui ts and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all nce products(including tec hnical data, services) described or contained herein are controlled under any of applicable local export control laws and regulat ions, such products must not be exported without obtaining the export license from the authorities concer ned in accordance with the above law. no part of this publication may be repr oduced or transmitted in any form or by an y means, electronic or mechanical, including photocopying and recording, or any information storage or retrieva l system, or otherwise, without the prior written permission of nce power semiconductor co.,ltd. information (including circuit diagrams and circuit parameter s) herein is for example only ; it is not guaranteed for volume production. nce believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual proper ty rights or other rights of third parties. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designi ng equipment, refer to the "delivery specification" for the nce product that you intend to use. this catalog provides information as of mar. 2010. specifications and information herein are subject to change without notice .
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